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Sample Request
Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-201208S-R11M
0.11
12.0
10.0
9.00
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R15M
0.15
13.0
11.0
7.00
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R24M
0.24
23.0
18.0
6.00
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R24M
0.24
20.0
17.0
6.60
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208U-R24M
0.24
18.0
16.0
7.00
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R33M
0.33
45.0
33.0
4.80
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R33M
0.33
24.0
20.0
5.40
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R47M
0.47
50.0
34.0
4.60
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R47M
0.47
28.0
24.0
4.80
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R68M
0.68
60.0
50.0
3.70
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-1R0M
1.00
70.0
55.0
3.50
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-1R0M
1.00
55.0
48.0
2.80
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-1R5M
1.50
135
118
2.50
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-2R2M
2.20
185
160
2.30
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-2R2M
2.20
156
130
2.00
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-3R3M
3.30
300
253
1.60
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-4R7M
4.70
325
285
1.40
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-6R8M
6.80
530
460
1.10
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-100M
10.0
800
700
0.80
-40~125
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
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