样品
申请
型号
Inductance.(μH)
DC Resistance max.(mΩ)
Saturation Current max.(A)
Saturation Current typ.(A)
Heat Rating Current max.(A)
Heat Rating Current typ.(A)
工作温度(℃)
长(mm)
宽(mm)
高(mm)
封装
屏蔽
AEC等级
EMDT-201208S-R11M
0.11
12.0
10.0
9.0
9.5
6.5
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R15M
0.15
13.0
11.0
7.0
7.5
6.3
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R24M
0.24
23.0
18.0
6.0
6.5
5.9
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R24M
0.24
20.0
17.0
6.6
7.0
5.9
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208U-R24M
0.24
18.0
16.0
7.0
7.2
6.5
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R33M
0.33
45.0
33.0
4.8
5.2
4.0
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R33M
0.33
24.0
20.0
5.4
6.0
5.2
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R47M
0.47
50.0
34.0
4.6
5.0
3.3
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-R47M
0.47
28.0
24.0
4.8
5.2
4.5
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-R68M
0.68
60.0
50.0
3.7
4.2
3.3
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-1R0M
1.00
70.0
55.0
3.5
4.0
2.9
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-1R0M
1.00
55.0
48.0
2.8
3.2
2.8
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-1R5M
1.50
135
118
2.5
3.0
1.9
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208H-2R2M
2.20
185
160
2.3
2.6
1.8
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-2R2M
2.20
156
130
2.0
2.2
1.6
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-3R3M
3.30
300
253
1.6
1.9
1.5
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-4R7M
4.70
325
285
1.4
1.6
1.5
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-6R8M
6.80
530
460
1.1
1.3
1.0
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
EMDT-201208S-100M
10.0
800
700
0.8
0.9
0.7
-55~155
2.0±0.2
1.2±0.2
0.80max.
SMD
Y
N
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