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Sample Request
Part No.型号
Inductance.(μH)电感量
DCR;max. 直流电阻(mΩ)
Isat;max.饱和电流(A)
Isat;typ. 饱和电流(A)
TOP 工作温度(℃)
Length长(mm)
Width宽(mm)
Heiht高(mm)
Footprint 封装
Shield屏蔽
AEC等级
EMDT-201210S-R10M
0.10
13.0
8.00
8.00
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R11M
0.11
8.5
7.00
12ff
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R22M
0.22
22.0
16.0
6.80
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R24M
0.24
23.0
17.0
6.70
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210H-R24M
0.24
14.0
11.5
6.70
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R33M
0.33
32.0
24.0
6.00
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210H-R33M
0.33
16.0
14.0
6.30
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R47M
0.47
36.0
29.0
5.00
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210H-R47M
0.47
26.0
22.0
5.50
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210U-R47M
0.47
20.0
18.0
5.50
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R56M
0.56
31.0
26.0
4.80
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-R68M
0.68
43.0
37.0
4.50
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-1R0M
1.00
63.0
55.0
3.50
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210H-1R0M
1.00
55.0
50.0
3.50
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210U-1R0M
1.00
55.0
50.0
3.60
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-1R2M
1.20
75.0
65.0
3.00
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-1R5M
1.50
85.0
76.0
2.70
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-2R2M
2.20
150
135
2.40
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210H-2R2M
2.20
145
125
2.40
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-3R3M
3.30
260
210
1.80
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-4R7M
4.70
300
275
1.60
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-6R8M
6.80
520
440
1.20
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
EMDT-201210S-100M
10.0
660
600
1.00
-40~125
2.0±0.2
1.2±0.2
1.0max.
SMD
Y
N
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